The SiSF20DN’s source contacts are placed side by side, with enlarged connections increasing the contact area with the PCB and reducing resistivity further compared to conventional dual package types.

To save PCB space, reduce component counts, and simplify designs, the device uses an optimized package construction with two monolithically integrated TrenchFET Gen IV n channel MOSFETs in a common drain configuration. For higher power density, the SiSF20DN’s R S1S2(ON) times area is 46.6 % lower than the next best alternative MOSFET, even when including larger 6 mm by 5 mm solutions.ĭesigned to increase power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies, the Vishay Siliconix SiSF20DN offers the industry’s lowest R S-S(ON) in a 60 V common-drain device. The result is reduced voltage drops across the power path and minimized power losses for increased efficiency. This value also represents a 42.5 % improvement over the next best solution in this footprint size and is 89 % lower than Vishay’s previous-generation devices. The dual MOSFET provides RS-S(ON) down to 10 mΩ typical at 10 V, the lowest among 60 V devices in the 3 mm by 3 mm footprint. A new common-drain dual n-channel 60 V MOSFET in the compact, thermally enhanced PowerPAK 1212-8SCD package introduced by Vishay Intertechnology.

Power mosfet bidirectional switch